High-Speed Traveling-Wave Electroabsorption Modulators
نویسندگان
چکیده
Electroabsorption modulators (EAMs) based on the quantum confined Stark effect in multiple quantum wells (MQWs) have advantages for high-speed, low drive voltage, and high extinction ratio applications. In this paper, a traveling-wave electrode structure is proposed to achieve high bandwidths with long devices and lower drive voltages at 1.55μm wavelength. An InGaAsP/InGaAsP MQW traveling-wave electroabsorption modulator (TWEAM) with a bandwidth above 20 GHz is fabricated. A drive voltage of 1.2 V for an extinction ratio of 20-dB is demonstrated. The effects of microwave transmission on the high-speed performance of TWEAMs are discussed. Successful data transmission experiments at 30 Gbit/s show a promising system performance of these devices. By using an integrated tandem TWEAM, pulse data transmission above 100 Gbit/s is achieved.
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